2″ Graphene/SiC

Semi-insulating, on-axis 4H-SiC, with an epitaxial graphene layer on the silicon face of the SiC substrate. Our graphene is produced by high temperature annealing of SiC and is offered as square 8 x 8 mm2 samples, or round 2″ or 4″ wafers.

5.800,00  VAT not incl.
SKU: GSC50-0-BC

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