4″ Graphene/SiC

Semi-insulating, on-axis 4H-SiC, with an epitaxial graphene layer on the silicon face of the SiC substrate. Our graphene is produced by high temperature annealing of SiC and is offered as square 8 x 8 mm<sup>2</sup> samples, or round 2″ or 4″ wafers.

12.000,00  VAT not incl.
SKU: GSC100-0-BC

Related